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| 2SK3679-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Ratings Unit V 900 V 900 Equivalent A Continuous drain current 9 A Pulsed drain current 36 V Gate-source voltage 30 A Repetitive or non-repetitive 9 mJ Maximum Avalanche Energy 287.7 kV/s Maximum Drain-Source dV/dt 40 Peak Diode Recovery dV/dt 5 kV/s Gate(G) Max. power dissipation 2.16 W 95 Operating and storage Tch +150 C -55 to +150 temperature range Tstg C Isolation Voltage VISO *6 2 kVrms *1 L=6.51mH, Vcc=90V, Tch=25C See to Avalanche Energy Graph *2 Tch <150C = *3 IF < -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C *4 VDS< 900V *5 VGS=-30V *6 t=60sec, f=60Hz = = = = Item Drain-source voltage Symbol VDS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C circuit schematic Drain(D) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=900V VGS=0V Tch=25C VDS=720V VGS=0V Tch=125C VGS=30V VDS=0V ID=4.5A VGS=10V ID=4.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=4.5A VGS=10V RGS=10 VCC=450V ID=9A VGS=10V L=6.51mH Tch=25C IF=9A VGS=0V Tch=25C IF=9A VGS=0V -di/dt=100A/s Tch=25C Min. 900 3.0 Typ. Max. 5.0 25 250 100 1.58 Units V V A nA S pF 5 1.22 10 1100 1650 140 210 8 12 25 38 12 18 50 75 12 18 31 46.5 4.5 8 11 16.5 0.90 3.2 15.5 ns nC 9 1.50 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.316 58.0 Units C/W C/W 1 2SK3679-01MR Characteristics FUJI POWER MOSFET 150 Allowable Power Dissipation PD=f(Tc) 14 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25C 20V 10V 8.0V 7.0V 6.5V 12 125 10 100 PD [W] 75 ID [A] 8 6 50 4 6.0V 25 2 VGS=5.5V 0 0 25 50 75 100 125 150 0 0 5 10 15 20 Tc [C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 10 10 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C ID[A] 1 gfs [S] 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 VGS[V] ID [A] 1.7 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=5.5V 6.0V 6.5V 7.0V 8.0V 10V 20V 5 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=4.5A,VGS=10V 1.6 4 RDS(on) [ ] 1.5 RDS(on) [ ] 3 1.4 2 max. 1.3 typ. 1 1.2 1.1 0 2 4 6 8 10 12 14 0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] 2 2SK3679-01MR FUJI POWER MOSFET 7.0 6.5 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=9A,Tch=25C 12 Vcc= 180V 450V 720V max. 10 VGS(th) [V] 4.5 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. VGS [V] 4.0 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 Tch [C] Qg [nC] 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C 10 0 Ciss 10 C [nF] 10 -1 Coss IF [A] 1 0.1 0.00 10 -2 Crss 10 -3 10 0 10 1 10 2 0.25 0.50 0.75 1.00 1.25 1.50 VDS [V] VSD [V] 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10 700 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=90V IAS=4A 600 tf 500 10 2 td(off) IAS=6A EAS [mJ] 0 1 400 t [ns] 300 IAS=9A td(on) 10 1 200 tr 100 10 0 0 -1 10 10 10 0 25 50 75 100 125 150 ID [A] starting Tch [C] 3 2SK3679-01MR FUJI POWER MOSFET 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=90V Avalanche Current I AV [A] 10 1 Single Pulse 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4 |
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